HUF75531SK8
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
C, CAPACITANCE (pF)
1000
(Continued)
3000
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
1.1
C
OSS
≅
C
DS
+ C
GD
1.0
100
C
RSS
=
C
GD
0.9
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
30
0.1
1.0
10
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
V
DD
= 40V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 6A
I
D
= 1A
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
2
0
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
-
I
AS
V
DD
t
P
V
DS
V
DD
+
0V
I
AS
0.01Ω
0
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HUF75531SK8 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
