Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
C
Operating Temperature
Lower Leakage Current : 10
µ
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.032
Ω
(Typ.)
Ο
IRFP150A
BV
DSS
= 100 V
R
DS(on)
= 0.04
Ω
I
D
= 43 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C
)
Ο
Value
100
43
30.4
1
O
2
O
1
O
1
O
3
O
Ο
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
Ο
Continuous Drain Current (T
C
=100
C
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
C
)
Ο
170
+
20
_
740
43
19.3
6.5
193
1.28
- 55 to +175
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Ο
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.78
--
40
Ο
Units
C
/W
Rev. B
©1999 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
