J108/J109/J110/MMBFJ108
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
TO-92
1
1. Drain 2. Source 3. Gate
3
2
1
SuperSOT-3
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T
A
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
25
-25
10
-55 ~ +150
Units
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
G
= -10µA, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
A
= 100°C
V
DS
= 15V, I
D
= 10nA
108
109
110
108
109
110
108
109
110
-3.0
-2.0
-0.5
80
40
10
8.0
12
18
85
15
15
Min.
-25
-3.0
-200
-10
-6.0
-4.0
Typ.
Max.
Units
V
nA
nA
V
V
V
mA
mA
mA
Ω
Ω
Ω
pF
pF
pF
Off Characteristics
Gate-Source Breakdwon Voltage
V
(BR)GSS
I
GSS
V
GS
(off)
Gate Reverse Current
Gate-Source Cutoff Voltage
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= 15V, I
GS
= 0
r
DS
(on)
Drain-Source On Resistance
V
DS
≤
0.1V, V
GS
= 0
Small Signal Characteristics
C
dg
(on)
C
sg
(off)
C
dg
(on)
C
sg
(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0MHz
V
DS
= 0, V
GS
= -10, f = 1.0MHz
V
DS
= 0, V
GS
= -10, f = 1.0MHz
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
