J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210
J211
J212
MMBFJ210
MMBFJ211
MMBFJ212
G
S
G
S
TO-92
D
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
5
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J210-212
350
2.8
125
357
Max
*MMBFJ210-212
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
J210/J211/J212/MMBFJ210/J211/J212, Rev A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
