J270
J270
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
1
TO-92
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
-30
30
50
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
gfs
goss
Parameter
Test Condition
I
G
= -1.0µA, V
DS
= 0
V
GS
= -20V, V
DS
= 0
V
DS
= -15V, I
D
= 1.0nA
V
DS
= -15V, V
GS
= 0
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
0.5
-2.0
6000
Min.
30
200
2.0
-15
15000
200
Max.
Units
V
pA
V
mA
µmhos
µmhos
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conductance
On Characteristics
Small Signal Characteristics
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, July 2003