J105 / J106 / J107 / JFTJ105
J105
J106
J107
JFTJ105
G
D
G
SOT-223
G
S
S
TO-92
D
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
5
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J105 - 107
625
5.0
125
357
Max
JFTJ105
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
1997
Fairchild Semiconductor Corporation