KSD5018
KSD5018
Built-in Resistor at B-E for Motor Drive
• High Voltage Power Darlington TR
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Sym-
bol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector- Base Voltage
Collector- Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
600
275
10
4
6
0.5
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
BV
CER
I
CES
I
EBO
V
CE
(sat)
V
BE
(sat)
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
= 1.5A, I
B
= 0.05A, L = 25mH
I
C
= 1mA, R
BE
= 330Ω
V
CE
= 500V
V
EB
= 10V, I
C
= 0
I
C
= 2A, I
B
= 5mA
I
C
= 3A, I
B
= 20mA
I
C
= 2A, I
B
= 5mA
Min.
275
600
1
1
1.5
1.5
2
Max.
Units
V
V
mA
mA
V
V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
