KSH3055
KSH3055
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
•
•
•
•
•
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ -I “ Suffix)
Electrically Similar to Popular KSE3055T
DC Current Gain Specified to 10A
High Current Gain - Bandwidth Product:
f
T
= 2MHz (MIN), I
C
= 500mA
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
70
60
5
10
6
20
1.75
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 30V, I
E
= 0
V
CB
= 70V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 10A
I
C
= 4A, I
B
= 0.4A
I
C
= 10A, I
B
= 3.3A
V
CE
= 4V, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
2
20
5
Min.
60
Max.
50
2
0.5
100
1.1
8
1.8
V
V
V
MHz
Units
V
µA
mA
mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
