KSP44/45
KSP44/45
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
=KSP44: 400V
KSP45: 350V
• Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP44
: KSP45
V
CEO
Collector-Emitter Voltage
: KSP44
: KSP45
V
EBO
I
C
P
C
P
C
T
J
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
a
=25°C)
Collector Power Dissipation (T
C
=25°C)
Junction Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
500
400
400
350
6
300
625
1.5
150
Units
V
V
V
V
V
mA
mW
W
°C
T
STG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP44
: KSP45
* Collector -Emitter Breakdown Voltage
: KSP44
: KSP45
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP44
: KSP45
I
CES
Collector Cut-off Current
: KSP44
: KSP45
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
V
CE
=400V, I
B
=0
V
CE
=320V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
40
50
45
40
0.5
0.5
0.1
200
µA
µA
µA
V
CB
=400V, I
E
=0
V
CB
=320V, I
E
=0
0.1
0.1
µA
µA
Test Condition
I
C
=100µA, I
B
=0
Min.
500
400
I
C
=1mA, I
B
=0
400
350
I
E
=100µA, I
C
=0
6
V
V
V
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.4
0.5
0.75
0.75
7
V
V
V
V
pF
V
BE
(sat)
* Base-Emitter Saturation Voltage
Output Capacitance
C
ob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
