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MBR1045 参数 Datasheet PDF下载

MBR1045图片预览
型号: MBR1045
PDF下载: 下载PDF文件 查看货源
内容描述: 10安培肖特基势垒整流器 [10 Ampere Schottky Barrier Rectifiers]
分类和应用: 二极管局域网
文件页数/大小: 3 页 / 48 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号MBR1045的Datasheet PDF文件第2页浏览型号MBR1045的Datasheet PDF文件第3页  
MBR1035-MBR1060
MBR1035 - MBR1060
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
.113(2.87)
.103(2.62)
.594(15.1)
.587(14.91)
.27(6.86)
.23(5.84)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
1
.16(4.06)
.14(3.56)
2
Dimensions
are in:
inches (mm)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
TO-220AC
.037(0.94)
.027(0.68)
PIN 1 +
10 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(repetitive)
i
f(surge)
P
D
R
θJA
R
θJL
T
stg
T
J
Average Rectified Current
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 135°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
T
A
= 25°C unless otherwise noted
.205(5.20)
.195(4.95)
PIN 2 -
CASE Positive
+
CASE
.025(0.64)
.014(0.35)
Parameter
Value
10
20
150
2.0
16.6
60
2.0
-65 to +175
-65 to +150
Units
A
A
A
W
mW/°C
°C/W
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
1035
1045
45
31
45
10,000
0.1
15
-
0.57
0.84
0.72
1.0
0.80
0.70
0.95
0.85
0.5
1050
50
35
50
1060
60
42
60
35
24
35
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage
I
F =
10 A, T
C
= 25°C
I
F =
10 A, T
C
= 125°C
I
F =
20 A, T
C
= 25°C
I
F =
20 A, T
C
= 125°C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
©1999
Fairchild Semiconductor Corporation
MBR1035 - MBR1060, Rev. A