MBR20200CT — Dual High Voltage Schotty Rectifier
August 2008
MBR20200CT
Dual High Voltage Schotty Rectifier
Features:
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Rohs Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C
• Wave Soldering or per MIL-STD-750 Method 2026.
1
Mark : MBR20200CT
PIN3
PIN2
PIN1
+
_
Absolute Maximum Ratings*
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
J
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current,
Tc=115°C
Peak Forward Surge Current, 8.3mS Half Sine wave
Storage Temperature Range
Operating Junction Temperature
Value
200
200
10 (Per Leg)
20(Per Device)
150
-55 ~ 150
150
Unit
V
V
A
A
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
R
θJ
C
R
θJ
A
T
a
=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case per Leg
Thermal Resistance, Junction to Ambient per Leg
Max
1.5
62.5
Unit
°C/W
°C/W
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics*
Symbol
I
R
T
a
=25°C unless otherwise noted
Parameter
Reverse Current
Test Condition
V
R
= 200V
V
R
= 200V
I
F
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
Min.
Max.
0.2
5
0.9
0.8
1.0
0.9
Unit
mA
V
F
Forward Voltage
V
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
MBR20200CT Rev. 1.0.0
1
www.fairchildsemi.com
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