MBR2035CT-MBR2060CT
MBR2035CT - MBR2060CT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1
+
PIN 3
CASE
PIN 2
1
2
3
TO-220AB
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
2035CT
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 135°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
45
Value
2045CT
2050CT
50
20
150
-65 to +175
-65 to +150
2060CT
60
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Lead
Parameter
Value
2.0
60
2.0
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
Forward Voltage
T
A
= 25°C unless otherwise noted
Parameter
2035CT
I
F =
10 A, T
C
= 25°C
I
F =
10 A, T
C
= 125°C
I
F =
20 A, T
C
= 25°C
I
F =
20 A, T
C
= 125°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
-
0.57
0.84
0.72
0.1
15
1.0
Device
2045CT
2050CT
2060CT
0.80
0.70
0.95
0.85
0.15
150
0.5
Units
V
V
V
V
mA
mA
A
I
R
I
RRM
2001
Fairchild Semiconductor Corporation
MBR2035CT - MBR2060CT, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
