MBRS320
SCHOTTKY POWER RECTIFIER
General Description:
Schottky Barrier Diodes make use of the rectification effect
of a metal to silicon barrier. They are ideally suited for high
frequency rectification in switching regulators & converters.
This device offers a low forward voltage performance in a
power surface mount package in applications where size and
weight are critical.
Features:
•
Compact surface mount package with J-bend leads (SMC).
•
3.0 Watt Power Dissipation package.
•
3.0 Ampere, forward voltage less than 500 mv
Ordering:
•
13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings*
Parameter
Storage Temperature
Maximum Junction Temperature
TA = 25
O
C unless otherwise noted
Value
-65 to +150
-65 to +125
20
3.0
4.0
80
11
Units
O
O
C
C
Repetitive Peak Reverse Voltage (V
RRM
)
Average Rectified Forward Current (T
L
= 100
O
C)
(T
L
= 90
O
C)
Surge Non Repetitive Forward Current
(Half wave, single phase, 60 Hz)
Junction to Case for Thermal Resistance (R
ØJL
)
SMC Package
(DO-214AB)
V
A
A
A
O
C/W
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Top Mark: B32
1
2
Electrical Characteristics
SYM
I
R
V
F
TA = 25
O
C unless otherwise noted
Actual Size
CHARACTERISTICS
Reverse Leakage Current
PW 300 us, <2% Duty Cycle
Forward Voltage
PW 300 us, <2% Duty Cycle
MIN
MAX
2.0
20
500
UNITS
mA
mA
mV
TEST CONDITIONS
V
R
= 20 V; Tj = 25
O
C
V
R
= 20 V; Tj = 100
O
C
I
F
= 3.0 A; Tj = 25
O
C
© 1997 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
