MJE700/701/702/703
Typical Characteristics
-5
10k
I
B
= -1000
µ
s
V
CE
= -3V
0 0
µ
s
I
B
= -4
00
µ
s
I
B
= -3
I
C
(A),COLLECTOR CURRENT
-4
I
B
= -900
µ
s
I
B
= -800
µ
s
I
B
= -700
µ
s
I
B
= -600
µ
s
h
FE
, DC CURRENT GAIN
-5
-3
I
B
= -500
µ
s
0
µ
s
I
B
= -20
1k
-2
I
B
= -100
µ
s
100
-1
-0
-0
-1
-2
-3
-4
10
-0.01
-0.1
-1
-10
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-100
1000
I
C
= 500 I
B
f=0.1MHZ
I
E
=0
C
ob
[pF], CAPACITANCE
-10
100
V
BE
(sat)
-1
10
V
CE
(sat)
-0.1
-0.01
-0.1
-1
-10
1
-0.01
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-100
60
50
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-10
40
0
10
µ
s
1m
s
5m
s
D
.C
.
30
-1
20
MJE700/701
MJE702/703
-0.1
-1
-10
-100
-1000
10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
