MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
: MJE800/801
: MJE802/803
: MJE800/801
: MJE802/803
Value
60
80
60
80
5
4
0.1
40
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
R1
R2
E
B
Equivalent Circuit
C
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: MJE800/801
: MJE802/803
Collector Cut-off Current
: MJE800/801
: MJE802/803
Collector Cut-off Current
Test Condition
I
C
= 50mA, I
B
= 0
Min.
60
80
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100°C
V
BE
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
750
750
100
2.5
2.8
3
2.5
2.5
3
V
V
V
V
V
V
100
100
100
500
2
Max.
Units
V
V
µA
µA
µA
µA
mA
I
CEO
I
CBO
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
: MJE800/802
: MJE801/803
: ALL DEVICES
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
V
BE
(on)
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
