MMBD1201 / 1203 / 1204 / 1205
Discrete POWER & Signal
Technologies
MMBD1201 / 1203 / 1204 / 1205
CONNECTION DIAGRAMS
3
1201
3
3
1203
3
24
1
2 NC
3
1
3
2
2
1
2
1204
1205
SOT-23
1
MARKING
MMBD1201 24
MMBD1204A 27
MMBD1203 26
MMBD1205A 28
1
2
1
2
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
50
200
600
700
1.0
2.0
-55 to +150
150
Units
V
mA
mA
mA
A
A
°C
°C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
MMBD1201/1203/1204/1205*
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã
1997 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
