MMBD1401 / 1403 / 1404 / 1405
MMBD1401 / 1403 / 1404 / 1405
Connection Diagrams
3
3
1401
3
3 1403
29
2
1
1
2
MARKING
MMBD1401 29
MMBD1403 32
MMBD1404 33
MMBD1405 34
1
1404 3
2NC
1
2
3 1405
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
200
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 100
µA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 200 mA
I
F
= 300 mA
V
R
= 120 V
V
R
= 175 V
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100
Ω
Min
200
760
Max
800
920
1.0
1.1
40
100
2.0
50
Units
V
mV
mV
V
V
nA
nA
pF
ns
I
R
C
T
t
rr
Reverse Current
Total Capacitance
Reverse Recovery Time
2002
Fairchild Semiconductor Corporation
MMBD1400 series, Rev. C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
