MMBD1201 / 1203 / 1204 / 1205
MMBD1201 / 1203 / 1204 / 1205
Connection Diagrams
3
3
1201
3
3 1203
24
2
1
1
2
MARKING
MMBD1201 24
MMBD1203 26
MMBD1204 27
MMBD1205 28
1
1204 3
2NC
1
2
3 1205
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 100
µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 300 mA
V
R
= 20 V
V
R
= 50 V
V
R
= 50 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
Min
100
550
660
820
0.87
-
Max
600
740
920
1.0
1.1
25
50
5.0
2.0
4.0
Units
V
mV
mV
mV
V
V
nA
nA
µA
pF
ns
I
R
Reverse Current
C
T
t
rr
Total Capacitance
Reverse Recovery Time
2001
Fairchild Semiconductor Corporation
MMBD1200 series, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
