2N5551- MMBT5551 NPN General Purpose Amplifier
April 2006
2N5551- MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means h
FE
180~240 in 2N5551 (
Test condition : I
C
= 10mA, V
CE
= 5.0V
)
tm
2N5551
3
MMBT5551
2
TO-92
1
SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
NOTES:
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
Value
160
180
6.0
600
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
P
D
R
θJA
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N5551
625
5.0
83.3
200
357
*MMBT5551
350
2.8
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6"
×
1.6"
×
0.06."
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
2N5551- MMBT5551 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
