NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
IC = 10 mA, IB = 0
C = 10 µA, IE = 0
40
V
V(BR)CBO
V(BR)EBO
ICEX
75
V
V
I
Emitter-Base Breakdown Voltage
Collector Cutoff Current
6.0
IE = 10 µA, IC = 0
VCE = 60 V, VEB(OFF) = 3.0 V
10
nA
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 125°C
VEB = 3.0 V, IC = 0
0.01
10
µA
µA
nA
IEBO
IBL
Emitter Cutoff Current
Base Cutoff Current
10
20
VCE = 60 V, VEB(OFF) = 3.0 V
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
35
50
75
35
100
50
IC= 10 mA,VCE= 10 V,TA= -55°C
IC = 150 mA, VCE = 10 V*
IC = 150 mA, VCE = 1.0 V*
IC = 500 mA, VCE = 10 V*
300
40
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
1.2
2.0
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage*
IC = 150 mA, IB = 1.0 mA
IC = 500 mA, IB = 50 mA
0.6
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Output Capacitance
Input Capacitance
Noise Figure
VCB = 10 V, IE = 0, f = 100 kHz
4.0
20
pF
pF
dB
Cobo
Cibo
NF
VEB = 0.5 V, IC = 0, f = 100 kHz
2.0
I
C = 100 µA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
8
ns
ns
ns
ns
td
tr
20
180
40
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
