MMPQ6700
MMPQ6700
E
2
B
1
E
3
B
2
B
4
E
4
B
3
E
1
SOIC-16
C
1
C
1
C
3
C
2
C
2
C
4
C
C
3 4
TRANSISTOR
TRANSISTOR
C
1
B
1
C
3
B
3
E
1
&
E
3
&
C
2
B
2
E
2
C
4
B
4
E
4
TYPE
NPN
PNP
Quad NPN & PNP General Purpose Amplifier
These complimentary devices can be used in switches with collector currents of 10
µA
to 100 mA. These devices are best used when space is the primary consideration.
Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteris-
tics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
MMPQ6700
1000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
