MMSD4148
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOD-123
Surface Mount package makes it desirable also as a general
purpose diode.
Features:
•
Compact surface mount with same footprint as mini-melf.
•
400 milliwatt Power Dissipation package.
•
High Breakdown Voltage, Fast Switching Speed.
•
Typical capacitance less than 1.5 picofarad.
Ordering:
High Conductance
Fast Diode
Absolute Maximum Ratings*
Sym
T
stg
T
J
P
D
R
OJA
W
iv
I
O
I
F
i
F(surge)
•
7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
TA = 25
O
C unless otherwise noted
Parameter
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
A
= 25
O
C
Linear Derating Factor from T
A
= 25
O
C
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
F
)
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 Second
Pulse Width = 1.0 microsecond
Value
-55 to +150
-55 to +150
400
3.2
312
75
200
600
1.0
2.0
Units
O
C
O
C
W
mW/
O
C
O
C/W
V
mA
mA
Amp
Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
ELECTRICALLY THE SAME AS
THE FDLL4148 DEVICE. SOURCED
FROM THE 1P PRODUCT.
Top Mark: 5H
Electrical Characteristics
SYM
B
V
I
R
TA = 25
O
C unless otherwise noted
1
2
Actual Size
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
MIN
100
75
MAX
UNITS
V
V
TEST CONDITIONS
I
R
= 100 uA
I
R
= 5.0 uA
V
R
=
V
R
=
V
R
=
I
F
=
V
R
=
20 V
20 V T
A
= 150
O
C
75 V
10 mA
0.0 V, f = 1.0 MHz
25
50
5.0
1.0
4.0
4.0
nA
uA
uA
V
pF
ns
V
F
C
T
T
RR
Forward Voltage
Capacitance
Reverse Recovery Time
I
F
= 10 mA V
R
= 6.0 V
I
RR
= 1.0 mA
R
L
= 100 Ohms
Revision A - November 11, 1998
© 1997 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
