Absolute Maximum Ratings (T = 25°C unless otherwise noted)
A
Parameters
Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
T
All
All
All
All
All
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
°C
°C
STG
Operating Temperature
T
OPR
Lead Solder Temperature
T
°C
SOL
Junction Temperature Range
T
°C
J
(1)
Isolation Surge Voltage
V
Vac(pk)
ISO
(peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
P
All
250
mW
D
2.94
mW/°C
EMITTER
Continuous Forward Current
Reverse Voltage
I
All
All
All
60
6
mA
V
F
V
P
R
D
Total Power Dissipation 25°C Ambient
Derate above 25°C
120
1.41
mW
mW/°C
DETECTOR
Off-State Output Terminal Voltage
V
MOC3031M/2M/3M
250
400
1
V
DRM
MOC3041M/2M/3M
Peak Repetitive Surge Current (PW = 100 µs, 120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
I
All
All
All
A
TSM
P
150
1.76
mW
D
mW/°C
Note
1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are
common.
Electrical Characteristics (T = 25°C Unless otherwise specified)
A
Individual Component Characteristics
Parameters
Test Conditions
Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage
I = 30 mA
V
All
All
1.25
0.01
1.5
V
F
F
Reverse Leakage Current
V
= 6 V
I
100
µA
R
R
DETECTOR
Peak Blocking Current, Either Direction
Peak On-State Voltage, Either Direction
Critical Rate of Rise of Off-State Voltage
Rated V
, I = 0 (note 1)
I
DRM1
All
All
All
100
3
nA
V
DRM
F
I
= 100 mA peak, I = 0
V
TM
1.8
TM
F
I
= 0 (Figure 9, note 3)
dv/dt
1000
V/µs
F
Transfer Characteristics (T = 25°C Unless otherwise specified.)
A
DC Characteristics
Test Conditions
Symbol
Device
Min Typ Max Units
LED Trigger Current
Main terminal voltage = 3V
(note 2)
I
MOC3031M/
MOC3041M
15
10
5
mA
µA
FT
MOC3032M/
MOC3042M
MOC3033M/
MOC3043M
Holding Current, Either Direction
I
All
400
H
2
www.fairchildsemi.com
MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M Rev. 1.0.1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
