Typical Electrical Characteristics
(continued)
8
70
, TRANSCONDUCTANCE (SIEMENS)
V
DS
= 1 5 V
6
TJ = -55°C
25°C
50
S(
)
ON
I
LIM
T
10
1m
10
50
0u
s
20
RD
125°C
4
I
D
, DRAIN CURRENT (A)
s
10
ms
V
GS
= 20V
2
1
DC
ms
2
SINGLE PULSE
R
θ
JC
= 3
o
C/W
T
C
= 25°C
1
2
5
10
30
50
70
g
0
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
FS
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 14. Maximum Safe Operating Area
.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.3
0.2
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 3.0 °C/W
0.1
0.05
P(pk)
0.05
0.03
0.02
0.01
0.01
0.02
0.01
Single Pulse
t
1
t
2
T
J
- T
C
= P * R
θ
JC
(t)
Duty Cycle, D = t
1
/t
2
0.1
0.5
1
5
t
1
, TIME (ms)
10
50
100
500
1000
0.05
Figure 15. Transient Thermal Response Curve.
NDP4060 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
