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NDS0610 参数 Datasheet PDF下载

NDS0610图片预览
型号: NDS0610
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体小信号场效应晶体管开关光电二极管PC
文件页数/大小: 13 页 / 553 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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April 1995
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.
Features
-0.18 and -0.12A, -60V. R
DS(ON)
= 10
Voltage controlled p-channel small signal switch
High density cell design for low R
DS(ON)
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
____________________________________________________________________________________________
S
D
G
S
D
G
S
SOT-23
NDS0610
G
TO-92
NDF0610
D
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDF0610
NDS0610
Units
V
DSS
V
DGR
V
GSS
I
D
P
D
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation T
A
= 25
°
C
Derate above 25
°
C
0.8
5
-0.18
-60
-60
±20
±30
-0.12
-1
0.36
2.9
-55 to 150
300
V
V
V
V
A
W
mW/
o
C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
200
350
°C/W
© 1998 Fairchild Semiconductor Corporation
NDS0610.SAM