November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
2N7000
S
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
2N7000
2N7002
NDS7002A
Units
V
DSS
Drain-Source Voltage
60
60
V
V
V
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
±
20
±
40
200
500
400
3.2
-55 to 150
300
115
800
200
1.6
280
1500
300
2.4
-65 to 150
I
D
P
D
T
J
,T
STG
T
L
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derated above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
© 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
