January 1998
NDS8426A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
10.5 A, 20 V. R
DS(ON)
= 0.0135
Ω
@ V
GS
= 4.5 V.
R
DS(ON)
= 0.016
Ω
@ V
GS
= 2.7 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
5
6
7
8
4
3
2
1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDS8426A
20
±8
10.5
30
2.5
1.2
1
-55 to 150
Units
V
V
A
W
T
J
,T
STG
R
θJA
R
θJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
NDS8426A Rev.B
1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
