NDS9407
May 2002
NDS9407
60V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Features
•
–3.0 A, –60 V.
R
DS(ON)
= 150 mΩ @ V
GS
= –10 V
R
DS(ON)
= 240 mΩ @ V
GS
= –4.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D
D
D
D
SO-8
D
D
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
T
A
=25
o
C unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–60
±20
(Note 1a)
Units
V
V
A
W
–3.0
–12
2.5
1.2
1.0
–55 to +175
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking
NDS9407
2002
Fairchild Semiconductor Corporation
Device
NDS9407
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
NDS9407 Rev B1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
