Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–30
V
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–23
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = –24 V,
VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 20 V,
VGS = –20 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1
–1.7
4.5
–3
V
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
ID = –5.3 A
42
65
57
60
100
73
VGS = –4.5 V, ID = –2 A
VGS= –10 V, ID = –5.3 A,TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –5.3 A
–20
A
S
Forward Transconductance
10
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
528
132
70
pF
pF
pF
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
7
13
14
9
14
24
25
17
14
ns
ns
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
ns
ns
Qg
Qgs
Qgd
10
2.2
2
nC
nC
nC
V
DS = –15 V,
ID = –4 A,
VGS = –10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
–1.2
A
V
Drain–Source Diode Forward
VSD
V
GS = 0 V, IS = –2.1 A (Note 2)
–0.8
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS9430 Rev B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
