NDS9933A
January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field ef-
fect transistor is produced using Fairchild’s propri-
etary, high cell density, DMOS technology. This very
high density process is especially tailored to mini-
mize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
Features
•
-2.8 A, -20 V. R
DS(on)
= 0.14
Ω
@ V
GS
= -4.5 V
R
DS(on)
= 0.19
Ω
@ V
GS
= -2.7 V
R
DS(on)
= 0.20
Ω
@ V
GS
= -2.5 V.
•
High density cell design for extremely low R
DS(on)
.
•
High power and current handling capability in a
widely used surface mount package.
•
Dual MOSFET in surface mount package.
D2
D1
D1
D2
5
6
4
3
2
1
G1
SO-8
S1
G1
S2
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
NDS9933A
-20
(Note 1a)
Units
V
V
A
W
±
8
-2.8
-10
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
°
C
T
J
, T
stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
NDS9933A
©1999
Fairchild Semiconductor Corporation
Device
NDS9933A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
