December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
Features
-7.5 A, -30 V. R
DS(ON)
= 0.030
Ω
@ V
GS
= -10 V
R
DS(ON)
= 0.045
Ω
@ V
GS
= -4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
______________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDT456P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
-30
±20
±7.5
±20
(Note 1a)
(Note 1b)
(Note 1c)
V
V
A
P
D
Maximum Power Dissipation
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
NDT456P Rev. F