NZT560/NZT560A
July 1998
NZT560 / NZT560A
C
E
B
C
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25°C unless otherwise noted
NZT560/NZT560A
60
80
5
3
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25°C unless otherwise noted
Max
Characteristic
NZT560/NZT560A
P
D
R
θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
2
62.5
W
°C/W
Units
©
1998 Fairchild Semiconductor Corporation
nzt560.lwpPrNA 7/10/98 revC
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
