TN6726A / NZT6726
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 40 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
30
40
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 1.0 A, V
CE
= 1.0 V
60
50
250
0.5
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
Small-Signal Current Gain
Collector-Base Capacitance
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
2.5
25
30
pF
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
1.0%
DC Typical Characteristics
300
250
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
V
CE
= 5V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
0
0.01
- 40 ºC
125 °C
β
= 10
200
150
100
50
0
0.01
I
C
- 40 ºC
25 °C
25 °C
0.1
1
- COLLECTOR CURRENT (A)
2
0.1
1
I
C
- COLLECTOR CURRENT (A)
P
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
