TN6729A / NZT6729
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BE( ON)
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
- 40 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
25 °C
0.8
25 °C
125 °C
0.6
0.6
125 °C
0.4
V
CE
= 5V
0.4
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
0.2
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
obo
- COLLECTOR-BASE CAPACITANCE (pF)
Collect or-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 60V
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
30
10
1
20
0.1
10
0.01
25
0
0
4
8
12
16
20
24
28
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
V
CB
- COLLECTOR-BASE VOLTAGE (V)
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
250
V
CE
= 10V
Safe Operating Area TO-226 / SOT-223
10
I
C
- COLLECTOR CURRENT (A)
10
µ
S
*
200
150
100
50
0
1
DC
1 00
T
µ
S
*
DC
*PULSED
OPERATION
T
A
= 25 °C
CO
1 .0
LL
EC
ms
TO
RL
T
*
EA
AM
D
=
BIE
25
NT
°C
=
0.1
25
°
C
LIMIT DETERMINED
BY BV
CEO
0.01
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
f
T
1
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
100
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
