PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
(continued)
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2222A
625
5.0
83.3
200
Max
*PZT2222A
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
Symbol
P
D
R
θJA
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
**MMBT2222A
350
2.8
357
MMPQ2222
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
**
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
125 °C
25 °C
400
300
200
25 °C
125 °C
0.2
100
- 40 °C
0.1
- 40 °C
0
0.1
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
-
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
25
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
