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PZT2222A 参数 Datasheet PDF下载

PZT2222A图片预览
型号: PZT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用放大器 [NPN General Purpose Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 212 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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PN2222A
MMBT2222A
C
PZT2222A
C
E
E
C
TO-92
EBC
SOT-23
Mark:1P
B
SOT-223
B
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
• Sourced from process 19.
Absolute Maximum Ratings *
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Value
40
75
6.0
1.0
- 55 ~ 150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
BV
(BR)CEO
BV
(BR)CBO
BV
(BR)EBO
I
CEX
I
CBO
I
EBO
I
BL
h
FE
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 60V, V
EB(off)
= 3.0V
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
a
= 125°C
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(off)
= 3.0V
I
C
= 0.1mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
a
= -55°C
I
C
= 150mA, V
CE
= 10V *
I
C
= 150mA, V
CE
= 10V *
I
C
= 500mA, V
CE
= 10V *
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
0.6
35
50
75
35
100
50
40
Min.
40
75
6.0
10
0.01
10
10
20
Max.
Units
V
V
V
nA
µA
µA
µA
µA
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain
On Characteristics
300
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
0.3
1.0
1.2
2.0
V
V
V
V
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A1, August 2004