MPSA06 / MMBTA06 / PZTA06
Discrete POWER & Signal
Technologies
MPSA06
MMBTA06
C
PZTA06
C
E
C
BE
E
C
B
TO-92
SOT-23
Mark: 1G
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80
80
4.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA06
625
5.0
83.3
200
Max
*MMBTA06
350
2.8
357
**PZTA06
1,000
8.0
125
Units
mW
mW/
°
C
°
C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
©
1997 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
