MPSA28 / MMBTA28 / PZTA28
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 100
µA,
V
BE
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CE
= 60 V, V
BE
= 0
V
EB
= 10 V, I
C
= 0
80
80
12
100
500
100
V
V
V
nA
nA
nA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 0.01 mA
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0 V
10,000
10,000
1.2
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
Current Gain - Bandwidth Product
Output Capacitance
I
C
= 10 mA, V
CE
= 5.0,
f = 100 MHz
V
CB
= 1.0 V, I
E
= 0, f = 1.0 MHz
125
8.0
MHz
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Typical Characteristics
100
V
CE
= 5V
80
60
25 °C
125 °C
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β
= 1000
1.2
- 40 ºC
0.8
25 ºC
125 ºC
40
20
0
0.001
- 40 °C
0.4
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
P 03
0.2
0
1
10
100
I
C
- COLLECTOR CURRENT (mA)
P 03
1000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
