QEB363
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
PACKAGE DIMENSIONS
0.276 (7.0)
MIN
CATHODE
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
0.019 (0.5)
0.012 (0.3)
FEATURES
• T-3/4 (2mm) Surface Mount Package
• Tape & Reel Option (See Tape & Reel Specifications)
• Lead Form Options: Gullwing, Yoke, Z-Bend
0.055 (1.4)
.118 (3.0)
.102 (2.6)
.059 (1.5)
.051 (1.3)
• Narrow Emission Angle, 24°
• Wavelength = 940 nm, GaAs
• Pink Tinted Lens
• Matched Photosensor: QSB363
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.024 (0.6)
SCHEMATIC
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
• High Radiant Intensity
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Units
°C
°C
°C
°C
mA
V
mW
NOTES
1. Derate power dissipation linearly
1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16” (1.6mm)
from housing
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C)
MIN.
TYP.
MAX.
UNITS
SYMBOL
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, t
P
= 20 ms
V
R
= 5 V
I
F
= 100 mA, t
P
= 20 ms
I
F
= 100 mA,
t
P
= 20 ms
!
P
"
V
F
I
R
I
e
t
r
t
f
—
—
—
—
8
—
—
940
±12
—
—
—
1
1
—
—
1.6
100
—
—
—
nm
Deg.
V
µA
mW/sr
µs
µs
1 of 4
100007C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
