QEB373 Subminiature Plastic Infrared Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature
Reverse Voltage
Power Dissipation
(1)
(Flow)
(2,3)
Continuous Forward Current
Parameter
Operating Temperature
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Unit
°C
°C
°C
°C
mA
V
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
= 25°C)
Symbol
λ
P
Θ
V
F
I
R
I
e
t
r
t
f
Parameter
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
Test Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA, t
p
= 20ms
V
R
= 5V
I
F
= 100mA, tp = 20ms
I
F
= 100mA
t
p
= 20ms
Min.
Typ.
880
±12
Max.
Units
nm
°
1.7
100
16
800
800
V
µA
mW/sr
ns
ns
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
www.fairchildsemi.com
2
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