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QSD2030F 参数 Datasheet PDF下载

QSD2030F图片预览
型号: QSD2030F
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料硅光电二极管 [Plastic Silicon Photodiode]
分类和应用: 半导体光电二极管光电二极管LTEPC
文件页数/大小: 4 页 / 227 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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QSD2030F — Plastic Silicon Photodiode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
BR
P
D
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Reverse Breakdown Voltage
Power Dissipation
(1)
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
100
Unit
°C
°C
°C
°C
V
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
=25°C)
Symbol
λ
PS
λ
SR
Θ
V
F
I
D
I
L
C
t
r
t
f
Parameter
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Forward Voltage
Reverse Dark Current
Reverse Light Current
Capacitance
Rise Time
Fall Time
Test Conditions
Min.
700
Typ.
880
Max.
1100
Units
nm
nm
°
V
±20
I
F
= 80mA
V
R
= 10V, Ee = 0
Ee = 0.5mW/cm
2
, V
R
= 5V,
λ
= 950nm
V
R
= 0, f = 1MHz, Ee = 0
V
R
= 5V, R
L
= 50
,
λ
= 950nm
15
25
60
5
5
1.3
10
nA
µA
pF
ns
©2005 Fairchild Semiconductor Corporation
QSD2030F Rev. 1.1.0
www.fairchildsemi.com
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