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QSE214 参数 Datasheet PDF下载

QSE214图片预览
型号: QSE214
PDF下载: 下载PDF文件 查看货源
内容描述: 塑封硅红外光敏晶体管 [Plastic Silicon Infrared Phototransistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 76 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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QSE213/QSE214 Plastic Silicon Infrared Phototransistor
Typical Performance Curves
Fig. 1 Dark Current vs. Collector Emitter Voltage
10
1
Fig. 2 Radiation Diagram
I
D
- DARK CURRENT (mA)
10
0
120°
130°
10
-1
140°
150°
10
-2
160°
170°
10
-3
0
10
20
30
40
50
60
180°
1.0
0.8
0.6
110°
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
V
CE
- COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Light Current vs. Ambient Temperature
I
L
- NORMALIZED LIGHT CURRENT
I
L
- NORMALIZED LIGHT CURRENT
10
Normalized to:
V
CE
= 5 V
I
e
= 0.5 mW/cm
2
T
A
= 25˚C
Fig. 4 Light Current vs. Collector to Emitter Voltage
10
I
e
= 1 mW/cm
2
1
I
e
= 0.5 mW/cm
2
I
e
= 0.2 mW/cm
2
0.1
I
e
= 0.1 mW/cm
2
1
0.01
Normalized to:
V
CE
= 5 V
I
e
= 0.5 mW/cm
2
T
A
= 25˚C
1
10
0.1
-40
-20
0
20
40
60
80
100
0.001
0.1
T
A
- AMBIENT TEMPERATURE (˚C)
V
CE
- COLLECTOR - EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
I
D
- NORMALIZED DARK CURRENT
10
3
Normalized to:
V
CE
= 25 V
T
A
= 25˚C
10
2
V
CE
= 25 V
10
1
V
CE
= 10 V
10
0
10
-1
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
3
QSE213/QSE214 Rev. 1.0.0
www.fairchildsemi.com