RFP25N06, RF1S25N06, RF1S25N06SM
Data Sheet
January 2002
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Features
• 25A, 60V
• r
DS(ON)
= 0.047
Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFP25N06
RF1S25N06
RF1S25N06SM
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
RFP25N06
F1S25N06
F1S25N06
Symbol
D
G
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.
S
Packaging
JEDEC TO- 220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
