S E M I C O N D U C T O R
RFP70N03, RF1S70N03,
RF1S70N03SM
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-220AB
SOURCE
DRAIN
GATE
December 1995
Features
• 70A, 30V
• r
DS(ON)
= 0.010Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175
o
C Operating Temperature
DRAIN
(FLANGE)
JEDEC TO-262AA
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Chan-
nel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approach-
ing those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
RFP70N03
RF1S70N03
RF1S70N03SM
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
RFP70N03
F1S70N03
F1S70N03
DRAIN
(FLANGE)
A
SOURCE
DRAIN
GATE
JEDEC TO-263AB
M
A
A
DRAIN
(FLANGE)
GATE
SOURCE
Symbol
D
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
G
Formerly developmental type TA49025.
S
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RFP70N03, RF1S70N03,
RF1S70N03SM
UNITS
V
V
V
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
=
+25
o
C,
Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
30
30
±20
70
200
(Refer to UIS Curve)
A
A
150
1.0
-55 to +175
W
W/
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
3404.2
3-45
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
