RFD14N05, RFD14N05SM
Data Sheet
February 2004
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Features
• 14A, 50V
• r
DS(ON)
= 0.100Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFD14N05
RFD14N05SM
PACKAGE
TO-251AA
TO-252AA
BRAND
F14N05
F14N05
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
©2004 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
