RFD16N05, RFD16N05SM
Data Sheet
November 2003
16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Features
• 16A, 50V
• r
DS(ON)
= 0.047Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFD16N05
RFD16N05SM
PACKAGE
TO-251AA
TO-252AA
BRAND
D16N05
D16N05
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
DRAIN (FLANGE)
©2003 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
