RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet
January 2002
11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Features
• 11A, 60V
• r
DS(ON)
= 0.107
Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
RFD3055LE
RFD3055LESM
RFP3055LE
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
F3055L
G
F3055L
FP3055LE
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
