S E M I C O N D U C T O R
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
December 1995
Features
• 70A, 60V
• r
DS(on)
= 0.014Ω
•
Temperature Compensated
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175
o
C Operating Temperature
DRAIN
(BOTTOM
SIDE METAL)
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
RFG70N06
RFP70N06
RF1S70N06
RF1S70N06SM
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
BRAND
RFG70N06
RFP70N06
F1S70N06
F1S70N06
DRAIN
(FLANGE)
A
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
SOURCE
DRAIN
GATE
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Formerly developmental type TA49007.
Symbol
D
JEDEC TO-263AB
M
A
A
G
GATE
SOURCE
S
DRAIN
(FLANGE)
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
60
60
±20
70
Refer to Peak Current Curve
Refer to UIS Curve
150
1.0
-55 to +175
UNITS
V
V
V
A
W
W/
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
©
Harris Corporation 1995
File Number
3206.3
3-51
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
