RFD14N05, RFD14N05SM, RFP14N05
Data Sheet
January 2002
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Features
• 14A, 50V
• r
DS(ON)
= 0.100Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFD14N05
RFD1 4N05SM
RFP14N05
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
D14N05
D14N05
RFP14N05
G
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
