RFP15N05L, RFP15N06L
Data Sheet
January 2002
15A, 50V and 60V, 0.140 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA0522.
Features
• 15A, 50V and 60V
• r
DS(ON)
= 0.140
Ω
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
Ordering Information
PART NUMBER
RFP15N05L
RFP15N06L
NOTE:
PACKAGE
TO-220AB
TO-220AB
BRAND
RFP15N05L
RFP15N06L
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFP15N05L, RFP15N06L Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
